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Si Wafer

2" (50.8mm) Silicon Wafer

SOI Wafer

Sapphire Wafer

Material Properties

III-V Wafer

Parameter

Type/Dopant

Characteristic

P, Boron N, Phosphorous N, Antimony N, Arsenic

Glass Substrate

Orientations

<100>, <111>

slice off orientations per customer’s specifications

Macroporous

Oxygen Content

10-20 ppmA

Custom tolerances per customer’s specification

Other Substrate

Carbon Content

0.5 – 1.0 ppmA

Custom tolerances per customer’s specification

Resistivity ranges- P, Boron- N, Phosphorous- N, Antimony- N, Arsenic

0.001 – 50 ohm cm

0.1 – 40 ohm cm

0.005 – 0.025 ohm cm

< 0.005 ohm cm

Mechanical Properties

Parameter

Prime

Monitor / Test A

Test

Diameter

2" ± 0.008"

2" ± 0.008"

2" ± 0.015"

Thickness

279 ± 20 µm (standard)

279 ± 25 µm (standard) 381 ± 25 µm 450 ± 25 µm

500 ± 25 µm 1000 ± 25 µm

279 ± 25 µm (standard)

TTV

< 5 µm

< 10 µm

< 15 µm

Bow

< 38 µm

< 38 µm

< 38 µm

Wrap

< 38 µm

< 38 µm

< 38 µm

Edge Rounding

SEMI-STD

Marking

Primary SEMI-Flat only, SEMI-STD Flats

Surface Quality

Parameter

Prime

Monitor / Test A

Test

Front Side Criteria

Surface condition

Chemical Mechanical Polished

Chemical Mechanical Polished

Chemical Mechanical Polished

Surface Roughness

< 2Å

< 2Å

< 2Å

Contamination,Particles @ >0.3 µm

< 2Å

< 2Å

< 2Å

Haze, Pits, Orange peel

None

None

None

Saw Marks, striations

None

None

None

Back Side Criteria

None

None

None

Caustic etched

Cracks, crowsfeet, saw marks,stains

Surface condition

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