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III-V Semiconductors

Gallium Arsenide, GaAs

After silicon second the most common semiconductor, energy gap Eg = 1.43 eV, direct bandgap; crystal structure - zinc blend, lattice constant 5.65 Ang., index of refraction 3.3, density 5.32 g/cm3, dielectric constant 12.9, intrinsic carrier concentration 2.1 x 106 cm-3, mobility of electrons and holes at 300 K - 8500 and 400 cm2/V-s, thermal conductivity 0.46 W/cm-oC, thermal expansion coefficient 6.86 x 10-6 oC-1; thermally unstable above 600 oC due to As evaporation; does not form sufficient quality native oxide; mechanically fragile; due to direct bandgap commonly used to fabricate light emitting devices; due to higher electron and hole mobilities, also foundation of the variety of high-speed electronic devices; bandgap can be readily engineered by forming ternary compounds based on GaAs, e.g. AlGaAs.

GaAs Wafer

Spec

Other Substrate

Type/Dopant

N-type/Si・Te, P-type/Zn, Semi-Insulating/Un-doped

Diameter

2inch ~ 3inch

Orientation

(100)・(110)・(111)~(611)For other orientation and off-orientation,please ask us.

Finishing

Single side mirror polished, Double sides mirror polished, Epi-ready For othertreatment,please ask us.

Thickness

2inch: 350or500um, 3inch: 625um For other thickness,please ask us.

Gallium Nitride, GaN

wide bandgap III-V semiconductor with direct bandgap 3.5 eV wide; among very few semiconductors capable of generating blue radiation, GaN is used for blue LEDs and lasers; intrinsically n-type semiconductor but can be doped p-type; GaN is formed as an epitaxial layer; Lattice mismatch remains a problem, creating a high defect density. Incorporation of Indium (InxGa1-xN) allows control of emission from green to violet (high and low In content respectively). GaN can also be used in UV detectors that do not respond to visible light. GaN has a Wurtzite(W) or Zinc Blend(ZB) crystal structure. Lattice constant [A] 3.189(W) 5.186(ZB); Density[g/cm3] 6.15(W) 6.15(ZB); Atomic concentration [cm-3] 8.9 x 1022(W) 8.9 x 1022(ZB); Melting point [oC] 2,500(W) 2,500(ZB); Thermal conduct.[W/cm oC] 1.3(W) 1.3(W); Thermal expansion coefficient[oC-1] ~1x10-6; Dielectric constant (static) 8.9(W) 9.7(ZB); Refractive index 2.4(W) 2.3(ZB);

GaP

Crystal structure zinc blend; Lattice constant [A] 5.45; Density [g/cm3] 4.14; Atomic concentration [cm-3] 4.94 x 1022; Melting point [oC] 1457; Thermal conductivity [W/cm oC] 1.1; Thermal expansion coefficient[1/oC] 4.65x10-6; Dielectric constant 11.1; Refractive index 3.02; Energy gap [eV] 2.26; Type of energy gap: direct; Electron mobility [cm2/V sec] 250; Hole mobility [cm2/V sec] 150;

Spec

MOCVD-deposited GaN

Type/Dopant

Diameter

Orientation

Finishing

Thickness

N-type/S,Si,P-type/Zn Un-doped also available

2inch ~ 3inch

 (100), (111), (110) Other special orientation or off angle also available.

Single side mirror polished, Double sides mirror polished, as-cut

250-1000um

Indium Phosphide, InP

Compared with GaAs or GaP,InP single crystal substrate has larger lattice constant,therefore it is possible to grow epitaxial like InGaAs,AlInAs,InGaAsP and AlGAINAs etc by matching the lattice on substrate(unifying lattice constant).

By combining these materials,it's possible to produce light-receiving and emitting device for light communication, super-fast transistor and resonance tunneling diode.

Spec

Type/Dopant

N-type/S・Sn・Un-doped, P-type/Zn, Semi-Insulating/Fe

Diameter

2inch

Orientation

(100)・(110)・(111)~(611) For other orientation and off-orientation,please ask us.

Finishing

Single side mirror polished, Double sides mirror polished, Epi-ready For other treatment,please ask us.

Thickness

2inch: 350or500um,For other thickness,please ask us.

Others

For career concentration, resistivity, mobility, it can be specified within the allowable range.

Gallium Antimondide, GaSb

Gallium Antimondide (GaSb) is a single crystal grown by special LEC method,used in infrared detector,LED,laser,transistor and thermostat photovoltaic system etc.

As typified by GaSb, III-V group compound semicoductors are direct transition semiconductor,the bandgap of which is smaller than Si semiconductor, it can also tranfer the electromagnetic wave (length of 0.8um ~2.2um) in near-infrared area to electricity.

Technically,solar cell based on GaSb is very difficult however research on II-VI group epi by MBE to GaSb substrate is now under study.

GaSb Wafer

Indium Aesenide, InAs

InAs (Indium Aesenide) of III-V group compound is a single crystal made by LEC method.

Wafer substrate is thinly sliced from single crystal ingot,then polished to epi-ready. InAs can be used

in different wide areas such like measurement and analysis as infrared detector element by performing

epitaxial layer to wafer substrate.

Spec

Type/Dopant

N-type/S, Un-doped, P-type/Zn

Diameter

2inch ~ 3inch

Orientation

(100)・(110)・(111)~(611) For other orientation and off-orientation,please ask us.

Finishing

Single side mirror polished, Double sides mirror polished, Epi-ready For other treatment,please ask us.

Thickness

2inch: 500um, 3inch: 625um For other thickness,please ask us.

Others

For career concentration, resistivity, mobility, it can be specified within the allowable range.

Indium Antimonide, InSb

InSb is a direct transition semiconductor with a narrow bandgap of 0.17eV (room temperature),mainly used as infrared detector element for infrared thermographic,thermal imaging camera and homing missile;hall element and magnetoresistance effect element etc.

Type/Dopant

Diameter

Orientation

Finishing

Thickness

Spec

N-type/Te, Un-doped, P-type/Ge

2inch ~ 4inch

(100)・(110)・(111)~(611) For other orientation and off-orientation,please ask us.

Single side mirror polished, Double sides mirror polished, Epi-ready For other treatment,please ask us.

2inch :625um, 3inch :800/900um, 4inch 1000um For other thickness,please ask us.

Others

For career concentration, resistivity, mobility, it can be specified within the

allowable range.

Indium antimonide

II-VI Semiconductors

II-VI group semiconductor is made by II group elements and VI group elements. Magnesium, Zinc, Cadmium and Hydrargyrum from II group and,Oxygen,Sulfur,Tellurium and Selenium from VI group are popularly used elements.

Compounds combined by these elements such as ZnO,CdTe,ZnSe and ZnS.

II-VI group semiconductor has many features like strong ion crystalline,hard but many of them are fragile,however bandgap can be greatly changed by changing the composion.

The material which has a bandgap correspond to visible light and infrared area can be used as material for light emmiting and receiving.

Product

CdSe

CdS

ZnSe

ZnTe

ZnS

Zinc selenide

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