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Si Wafer

4" (100mm) Silicon Wafer Specifcations

SOI Wafer

Sapphire Wafer

III-V Wafer

Material Properties

Glass Substrate

Parameter

Characteristic

Macroporous

Other Substrate

Type/Dopant

Orientations

Oxygen Content

P, Boron N, Phosphorous N, Antimony N, Arsenic

<100>, <111> slice off orientations per customer’s specifications

10-18 ppmA Custom tolerances per customer’s specification

Carbon Content

< 0.5 ppmA Custom tolerances per customer’s specification

Resistivity ranges- P, Boron- N, Phosphorous- N, Antimony- N, Arsenic

0.001 – 50 ohm cm 0.1 – 40 ohm cm 0.005 – 0.025 ohm cm < 0.005 ohm cm

Mechanical Properties

Parameter

Prime

Monitor / Test A

Test

Diameter

100 ± 0.2 mm

100 ± 0.2 mm

100 ± 0.5 mm

Thickness

525 ± 20 µm (standard)

525 ± 25 µm (standard) 381 ± 25 µm 625 ± 25 µm 700 ± 25 µm 800 ± 25 µm 1000 ± 25 µm 1500 ± 25 µm

525 ± 50 µm (standard)

TTV

< 5 µm

< 10 µm

< 15 µm

Bow

< 30 µm

< 30 µm

< 40 µm

Wrap

< 30 µm

< 30 µm

< 40 µm

Edge Rounding

SEMI-STD

Marking

SEMI-STD Flats, Primary SEMI-Flat only

Surface Quality

Parameter

Prime

Monitor / Test A

Test

Front Side Criteria

Surface condition

Chemical Mechanical Polished

Chemical Mechanical Polished

Chemical Mechanical Polished

Surface Roughness

< 2Å

< 2Å

< 2Å

Contamination,Particles @ >0.3 µm

 = 20

 = 20

 = 20

Haze, Pits, Orange peel

None

None

None

Saw Marks, striations

None

None

None

Back Side Criteria

None

None

None

Caustic etched

Cracks, crowsfeet, saw marks,stains

Surface condition

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