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Si Wafer

3" (76.2mm) Silicon Wafer Specifcations

SOI Wafer

Sapphire Wafer

III-V Wafer

Material Properties

Parameter

Characteristic

Glass Substrate

Type/Dopant

P, Boron N, Phosphorous N, Antimony N, Arsenic

Macroporous

Orientations

<100>, <111> slice off orientations per customer’s specifications

Other Substrate

Oxygen Content

10-18 ppmA Custom tolerances per customer’s specification

Carbon Content

< 0.6 ppmA Custom tolerances per customer’s specification

Resistivity ranges- P, Boron- N, Phosphorous- N, Antimony- N, Arsenic

0.001 – 50 ohm cm 0.1 – 40 ohm cm 0.005 – 0.025 ohm cm < 0.005 ohm cm

Mechanical Properties

Parameter

Prime

Monitor / Test A

Test

Diameter

3" ± 0.008"

3" ± 0.008"

3" ± 0.008"

Thickness

381 ± 20 µm (standard)

381 ± 25 µm (standard) 250 ± 25 µm 635 ± 25 µm 1000 ± 25 µm 1300 ± 25 µm

381 ± 50 µm (standard)

TTV

< 5 µm

< 10 µm

< 15 µm

Bow

< 30 µm

< 30 µm

< 40 µm

Wrap

< 30 µm

< 30 µm

< 40 µm

Edge Rounding

SEMI-STD

Marking

SEMI-STD Flats, Primary SEMI-Flat only

Surface Quality

Parameter

Prime

Monitor / Test A

Test

Front Side Criteria

Surface condition

Chemical Mechanical Polished

Chemical Mechanical Polished

Chemical Mechanical Polished

Surface Roughness

< 2Å

< 2Å

< 2Å

Contamination,Particles @ >0.3 µm

 = 20

 = 20

 = 20

Haze, Pits, Orange peel

None

None

None

Saw Marks, striations

None

None

None

Back Side Criteria

None

None

None

Caustic etched

Cracks, crowsfeet, saw marks,stains

Surface condition

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